DisChem's HSQ e beam resist offers unparalleled precision for electron beam lithography. Formulated with hydrogen silsesquioxane (HSQ), this resist ensures excellent pitch resolution, sensitivity, and etch resistance. Ideal for direct write thin film applications, it supports advanced microlithography processes, enhancing device performance while minimizing process waste. With immediate availability and a lead time of less than one week, DisChem’s HSQ e-beam resist is the reliable choice for semiconductor manufacturing and other high-tech industries requiring precise patterning.